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Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC Features * * * * * * Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances SOT-89 Type w TLE 4905 G w TLE 4935 G w TLE 4935-2 G w TLE 4945-2 G w New type Ordering Code Q62705-K402 Q62705-K404 Q62705-K405 Q62705-K403 Package SOT-89 SOT-89 SOT-89 SOT-89 TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group 1 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Pin Configuration (top view) 2.25 0.2 Center of sensitive area 10.2 1 2 3 AEP02150 Figure 1 Pin Definitions and Funtions Pin No. 1 2 3 Symbol Function Supply voltage Ground Output VS GND Q Semiconductor Group 2 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator VS 1 HallGenerator 3 Q VS VRef Amplifier SchmittTrigger Output Stage AEB01243 2 GND Figure 2 Block Diagram Semiconductor Group 3 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Unipolar Type TLE 4905 (figure 3 and 4) When a positive magnetic field is applied in the indicated direction (figure 3) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the magnetic field is reduced to a value smaller than the release point, the output of the IC turns off (Release Point; figure 4). + Branded Side S N VQ + VS - AES01231 Figure 3 Sensor/Magnetic-Field Configuration B BOP BRP 0 Induction t VQ VQH Output Voltage VQL t AED01420 Figure 4 Switching Characteristics Unipolar Type 4 1998-04-29 Semiconductor Group TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). The output state does not change unless a reverse magnetic field exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will turn off (Release Point; figure 6). + Branded Side S N VQ + VS - AES01231 Figure 5 Sensor/Magnetic-Field Configuration B BOP 0 t BRP Induction VQ VQH Output Voltage VQL t AED01421 Figure 6 Switching Characteristics Bipolar Type 5 1998-04-29 Semiconductor Group TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Absolute Maximum Ratings Tj = - 40 to 125 C Parameter Supply voltage Supply voltage Output voltage Output current Output reverse current Junction temperature Storage temperature Thermal resistance Symbol Limit Values Unit Remarks min. max. 32 40 32 100 100 125 150 100 V V V mA mA C C - - 40 - - - - - 40 - 50 VS VS VQ IQ - IQ Tj Tstg Rth JA t < 400 ms; = 0.1 - - - - - K/W - Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Supply voltage Junction temperature Symbol Limit Values Unit Remarks min. max. 18 125 V C - - 4.0 - 40 VS Tj Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G AC/DC Characteristics 4.0 V VS 18 V; - 40 C Tj 125 C Parameter Supply current Symbol Limit Values min. typ. 2.5 3.5 0.25 - - max. 7 8 0.5 10 1 mA mA V A s - - - - - Unit Test Condition Test Circuit 1 1 1 1 1 ISHigh ISLow VQSat IQL tr / tf B < BRP B > BOP IQ = 40 mA IQ = 40 mA VQ = 18 V Output saturation voltage Output leakage current Rise/fall time RL = 1.2 k CL 33 pF Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 C and the given supply voltage. Note: Moderate changes may occur during the development process or customer discussion. Semiconductor Group 7 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Magnetic Characteristics 4.0 V VS 18 V Parameter Symbol TLE 4905 unipolar min. Junction Temperature Tj = - 40 C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP BHY 7.5 5.5 2 19 17 6.5 10 - 20 20 20 - 10 40 15 - 27 30 27 - 15 54 -3 -6 1 6 3 5 mT mT mT max. Limit Values TLE 4935 TLE 4935-2 bipolar latch bipolar latch min. max. min. max. TLE 4945-2 bipolar switch min. max. Unit Junction Temperature Tj = 25 C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP BHY 7 5 2 18 16 6 10 - 20 20 20 - 10 40 14 - 26 28 26 - 14 52 -3 -6 1 6 3 5 mT mT mT Junction Temperature Tj = 85 C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP BHY 6.5 4.5 2 17.5 15 5.5 10 - 20 20 20 - 10 40 13 - 26 26 26 - 13 52 -3 -6 1 6 3 5 mT mT mT Junction Temperature Tj = 125 C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP BHY 6 4 2 17 14 5 10 - 20 20 20 - 10 40 12 - 25 24 25 - 12 50 -3 -6 1 6 3 5 mT mT mT Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 C and the given supply voltage. Semiconductor Group 8 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G VS S + 4.7 nF - 1 VS RL CL 2 GND TLE 4905/35/35-2/45-2 3 Q Q AES01244 Unipolar Type TLE 4905 VQ VQH VQH Bipolar Type TLE 4935 VQ VQL 0 VQL B RP B HY B OP B B RP 0 B HY B OP B AED01422 VQ VQH 0.9 VQH 0.1VQH t tr tf AED01246 Figure 7 Test Circuit 1 9 1998-04-29 Semiconductor Group TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Mainframe Line 1 4.7 nF 1.2 k 4.7 nF 2 Sensor VS VS GND TLE 4905/35/35-2/45-2 Signal 3 Q AES01247 Figure 8 Application Circuit Semiconductor Group 10 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G If not otherwise specified, all curves reflect typical values at Tj = 25 C and VS = 12 V. Quiescent Current Difference versus Temperature 1.0 AED01459 Saturation Voltage versus Output Current 1.2 AED01461 S mA S = SLow - SHigh 0.75 VQ V 1.0 __ 4.0 V < VS < 18 V Q = 40 mA 0.8 0.5 0.6 T j = 125 C 0.4 0.25 0.2 T j = -40 C 0 -40 0 50 100 150 C 200 0 0 20 40 60 mA 100 Tj Q Quiescent Current versus Junction Temperature S 8 mA AED01249 TLE 4905 Operate-and Release-Point versus Junction Temperature 25 AED01424 B mT __ 4.0 V < VS <18 V VQ = High 6 20 B OPmax 15 B RPmax 4 VS = 18 V 10 B OPtyp B RPtyp 2 VS = 4.0 V 5 B OPmin B RPmin 0 -50 0 50 100 C Tj 200 0 -40 0 50 100 C Tj 200 Semiconductor Group 11 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G TLE 4935 Operate-and Release-Point versus Junction Temperature 30 AED01423 TLE 4935-2 Operate-and Release-Point versus Junction Temperature 30 AED01640 B mT 20 __ 4.0 V < VS < 18 V B mT 20 __ 4.0 V < VS < 18 V B OPmax B OPtyp B OPmin B OPmax B OPtyp 10 10 B OPmin 0 0 -10 B RPmax -10 B RPmax -20 B RPtyp B RPmin B RPtyp -20 -40 0 50 100 B RPmin 200 C Tj -30 -40 0 50 100 C Tj 200 TLE 4905 Hysteresis versus Junction Temperature 8 AED01426 TLE 4945-2 Operate-and Release-Point versus Junction Temperature 18 AED02353 B mT 6 __ 4.0 V < VS < 18 V B mT 12 __ 4.0 V < VS < 18 V 6 B OPmax B RPmax B OPtyp B RPtyp B OPmin B HYmax 4 0 B HYtyp -6 2 B RPmin B HYmin -12 0 -40 0 50 100 C Tj 200 -18 -40 0 50 100 C Tj 200 Semiconductor Group 12 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Package Outline SOT-89 (SMD) (Plastic Small Outline Transistor Package) 4.5 45 0.25 +0.2 acc. to DIN 6784 1.5 0.2 max 1) 1.6 10 max 2.6 max 4.25 max 0.65 max 1.5 3 1) 0.25 min 1.0 0.2 2.75 +0.1 -0.15 1 Ejector pin marking possible Package Information d: Distance chip to upper side of IC SOT-89: 1.05 mm d AEA02487 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 13 Dimensions in mm 1998-04-29 GPS05558 |
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